IDT04S60C

Recovery Time :
Maximum Power Dissipation :
Product : Schottky Silicon Carbide Diodes
Mounting Style : Through Hole
Configuration : Single
Packaging : Tube
Maximum Reverse Leakage Current : 50 uA
Peak Reverse Voltage : 600 V
Operating Temperature Range : - 55 C to + 175 C
Max Surge Current : 32 A
Package / Case : TO-220
Forward Continuous Current : 4 A
Forward Voltage Drop : 1.7 V


Features:

• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target applications
• Breakdown voltage tested at 5mA²⁾


Specifications

Parameter	Symbol	Conditions	Value	Unit
Continuous forward current	IF	TC<140	4	A
RMS forward current	IF,RMS	f =50 Hz	5.6
Surge non-repetitive forward current, sine halfwave	IF,SM	TC=25, tp=10 ms	32
Repetitive peak forward current	IF,RM	Tj=150, TC=100, D =0.1	18
Non-repetitive peak forward current	IF,max	TC=25, tp=10 s	132
i²t value	i2dt	TC=25,tp=10 ms	5.1	A2s
Repetitive peak reverse voltage	VRRM		600	V
Diode dv/dt ruggedness	dv/dt	VR = 0...480V	50	V/ns
Power dissipation	Ptot	TC=25	42	W
Operating and storage temperature	Tj,Tstg		-55 ... 175
Mounting torque		M3 and M3.5 screws	60	Mcm

Parameters:

Technical/Catalog Information	IDT04S60C
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Diode Type	Silicon Carbide
Voltage - DC Reverse (Vr) (Max)	600V
Current - Average Rectified (Io)	4A (DC)
Voltage - Forward (Vf) (Max) @ If	1.9V @ 4A
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	50A @ 600V
Speed	No Recovery Time > 500mA (Io)
Mounting Type	Through Hole, Radial
Package / Case	TO-220-2
Packaging	Tube
Capacitance @ Vr, F	130pF @ 1V, 1MHz
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IDT04S60C IDT04S60C