IDT08S60C

Recovery Time :
Maximum Power Dissipation :
Product : Schottky Silicon Carbide Diodes
Mounting Style : Through Hole
Configuration : Single
Packaging : Tube
Maximum Reverse Leakage Current : 100 uA
Peak Reverse Voltage : 600 V
Operating Temperature Range : - 55 C to + 175 C
Forward Continuous Current : 8 A
Package / Case : TO-220
Forward Voltage Drop : 1.7 V
Max Surge Current : 59 A


Features:

·Revolutionary semiconductor material - Silicon Carbide
·Switching behavior benchmark
·No reverse recovery/ No forward recovery
·No temperature influence on the switching behavior
·High surge current capability
·Pb-free lead plating; RoHS compliant
·Qualified according to JEDEC¹⁾ for target applications
·Breakdown voltage tested at 5mA²⁾



Application

·CCM PFC
·Motor Drives


Specifications

Absolute Maximum Ratings (TA=25)		UR (GaAsP/GaP)	Unit
Reverse Voltage	VR	5	V
Forward Current	I F	30	mA
Forward Current (Peak) 1/10Duty Cycle 0.1ms Pulse Width	iFS	160	mA
Power Dissipation	PT	75	mW
Operating Temperature	T A	-40 ~ +85
Storage Temperature	Tstg	-40 ~ +85

Parameters:

Technical/Catalog Information	IDT08S60C
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Diode Type	Silicon Carbide
Voltage - DC Reverse (Vr) (Max)	600V
Current - Average Rectified (Io)	8A (DC)
Voltage - Forward (Vf) (Max) @ If	1.7V @ 8A
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	100A @ 600V
Speed	No Recovery Time > 500mA (Io)
Mounting Type	Through Hole, Radial
Package / Case	TO-220-2
Packaging	Tube
Capacitance @ Vr, F	310pF @ 1V, 1MHz
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IDT08S60C IDT08S60C