IDT10S60C

Recovery Time :
Maximum Power Dissipation :
Product : Schottky Silicon Carbide Diodes
Mounting Style : Through Hole
Configuration : Single
Packaging : Tube
Forward Continuous Current : 10 A
Peak Reverse Voltage : 600 V
Operating Temperature Range : - 55 C to + 175 C
Package / Case : TO-220
Forward Voltage Drop : 1.7 V
Maximum Reverse Leakage Current : 140 uA
Max Surge Current : 84 A


Features:

· Revolutionary semiconductor material - Silicon Carbide
· Switching behavior benchmark
· No reverse recovery/ No forward recovery
· No temperature influence on the switching behavior
· High surge current capability
· Pb-free lead plating; RoHs compliant  for target applications
· Qualified according to JEDEC¹⁾
· Breakdown voltage tested at 5mA²⁾


Specifications

Parameter	Symbol	Conditions	Value	Unit
Continuous forward current RMS forward current	IF IF,RMS	TC <140 f=50 Hz	10 15	A
Surge non-repetitive forward current, sine halfwave	IF,SM	TC=25,tp=10 ms	84
Repetitive peak forward current	IF,RM	Tj =150 , TC =100 ,D=0.1	39
Non-repetitive peak forward current	IF,max	TC=25 ,tp=10s	350
i2t value Repetitive peak reverse voltage Diode ruggedness dv/dt Power dissipation Operating and storage temperature Mounting torque	i2dt VRRM dv/dt Ptot Tj,Tstg	TC=25 ,tp =10 ms VR=0.480 TC =25 M3 and M3.5 screws	35 600 50 100 -55 ... 175 60	A2s V V/ns W Ncm

Parameters:

Technical/Catalog Information	IDT10S60C
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Diode Type	Silicon Carbide
Voltage - DC Reverse (Vr) (Max)	600V
Current - Average Rectified (Io)	10A (DC)
Voltage - Forward (Vf) (Max) @ If	1.7V @ 10A
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	140A @ 600V
Speed	No Recovery Time > 500mA (Io)
Mounting Type	Through Hole, Radial
Package / Case	TO-220-2
Packaging	Tube
Capacitance @ Vr, F	480pF @ 1V, 1MHz
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IDT10S60C IDT10S60C