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MFG:PG-TO220-2  Package Cooled:7850  D/C:INFINEON  

IDT10S60C Product Image

IDT Series Datasheet download

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Part Number: IDT10S60C

 

MFG: PG-TO220-2

Package Cooled: 7850

D/C: INFINEON

 

Urgent Purchase

IDT10S60C Maximum Ratings

Parameter Symbol Conditions Value Unit
Continuous forward current
RMS forward current		 IF
IF,RMS		 TC <140
f=50 Hz
10
15
 A
Surge non-repetitive forward current,
sine halfwave		 IF,SM TC=25,tp=10 ms
84
Repetitive peak forward current IF,RM Tj =150 ,
TC =100 ,D=0.1
39
Non-repetitive peak forward current IF,max TC=25 ,tp=10s
350
i2t value

Repetitive peak reverse voltage

Diode ruggedness dv/dt

Power dissipation

Operating and storage temperature

Mounting torque		 i2dt

VRRM

dv/dt

Ptot

Tj,Tstg


 TC=25 ,tp =10 ms



VR=0.480

TC =25



M3 and M3.5 screws
35

600

50

100

-55 ... 175

60
 A2s

V

V/ns

W



Ncm

IDT10S60C Features

· Revolutionary semiconductor material - Silicon Carbide
· Switching behavior benchmark
· No reverse recovery/ No forward recovery
· No temperature influence on the switching behavior
· High surge current capability
· Pb-free lead plating; RoHs compliant  for target applications
· Qualified according to JEDEC1)
· Breakdown voltage tested at 5mA2)

IDT10S60C datasheet

IDT 79R3081
PDF/DataSheet Download

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