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MFG:IDT Package Cooled:DIP
Part Number: IDT6116SA
MFG: IDT
Package Cooled: DIP
Description: The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized as 2K x 8. It is fabricated using IDT...
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IDT6116SA
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DataSheet
General Description
IDT6116SA General Description
The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized as 2K x 8. It is fabricated using IDT's high-performance, high-reliability CMOS technology.
Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby power mode, as long as CS remains HIGH. This capability provides significant system level power and cooling savings. The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1mW to 4mW operating off a 2V battery.
All inputs and outputs of the IDT6116SA/LA are TTLcompatible.Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation.
The IDT6116SA/LA is packaged in 24-pin 600 and 300 mil plastic or ceramic DIP and a 24-lead gull-wing SOIC, and a 24 -lead J-bend SOJ providing high board-level packing densities.
Military grade product is manufactured in compliance to the latest version of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.
IDT6116SA Maximum Ratings
|
Symbol |
Rating |
Commercial |
Militaryt |
Unit |
|
VTERM(2) |
Terminal Voltage |
0.5 to+7.0 |
-0.5 to +70 |
V |
|
TA |
Operating Temperature |
0 to +70 |
55 to +125 |
oC |
|
TBIAS |
Temperature Under Bias |
55 to +125 |
-65 to +135 |
oC |
|
TSTG |
Storage Temperature |
55 to + 125 |
-65 to +150 |
oC |
|
PT |
Power Dissipation |
1.0 |
1.0 |
W |
|
IOUT |
DC Output Current |
50 |
50 |
mA |
IDT6116SA Features
• High-speed access and chip select times
- Military: 20/25/35/45/55/70/90/120/150ns (max.)
- Commercial: 15/20/25/35/45ns (max.)
• Low-power consumption
• Battery backup operation
- 2V data retention voltage (LA version only)
• Produced with advanced CMOS high-performance technology
• CMOS process virtually eliminates alpha particle soft-error rates
• Input and output directly TTL-compatible
• Static operation: no clocks or refresh required
• Available in ceramic and plastic 24-pin DIP, 24-pin Thin
Dip and 24-pin SOIC and 24-pin SOJ
• Military product compliant to MIL-STD-833, Class B
- Military: 20/25/35/45/55/70/90/120/150ns (max.)
- Commercial: 15/20/25/35/45ns (max.)
• Low-power consumption
• Battery backup operation
- 2V data retention voltage (LA version only)
• Produced with advanced CMOS high-performance technology
• CMOS process virtually eliminates alpha particle soft-error rates
• Input and output directly TTL-compatible
• Static operation: no clocks or refresh required
• Available in ceramic and plastic 24-pin DIP, 24-pin Thin
Dip and 24-pin SOIC and 24-pin SOJ
• Military product compliant to MIL-STD-833, Class B
IDT6116SA Connection Diagram
IDT6116SA
PDF/DataSheet Download
- Datasheet: IDT6116SA
- File Size: 113064 KB
- Manufacturer: IDT
- Click here to Download
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