Features: True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed accessñ Military: 20/25/35/55/70ns (max.)ñ Industrial: 35/55ns (max.)ñ Commercial:15/17/20/25/35/55ns (max.)Low-power operationñ IDT7005SActive: 750mW (typ.)Sta...
IDT7005S/L: Features: True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed accessñ Military: 20/25/35/55/70ns (max.)ñ Industrial: 35/55ns (max.)&ntil...
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Symbol |
Rating |
Com'l & Ind'l
|
Unit |
Military |
VTERM |
Terminal Voltage with respect to GND |
0.5 to +4.5 |
V |
-0.5 to +7.0 |
TSTG |
Temperature Under Bias |
55 to +125 |
°C |
-65 to +135 |
TSTG |
Storage Temperature |
50 to +50
|
mA |
-65 to +150 |
IOUT |
DC Output Current |
50
|
mA |
50 |
The IDT7005S/L is a high-speed 8K x 8 Dual-Port Static RAM. The IDT7005 is designed to be used as a stand-alone 64K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 16-bit-or-more word systems. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 16-bit or wider memory system applications results in full-speed, errorfree operation without the need for additional discrete logic. This IDT7005S/L provides two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory.
An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode. Fabricated using IDTís CMOS high-performance technology, these devices typically operate on only 750mW of power. Low-power (L) versions offer battery backup data retention capability with typical power consumption of 500µW from a 2V battery. The IDT7005S/L is packaged in a ceramic 68-pin PGA, 68-pin quad flatpack, 68-pin PLCC and a 64-pin thin quad flatpack, (TQFP). Military grade product is manufactured in compliance with the latest revision of MILPRF- 38535 QML making it ideally suited to military temperature applications demanding the highest level of performance and reliability.