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IDT70825S/L

Features: High-speed access Military: 35/45ns (max.) Commercial: 20/25/35/45ns (max.) Low-power operation IDT70825SActive: 775mW (typ.)Standby: 5mW (typ.) IDT70825LActive: 775mW (typ.)Standby: 1mW (typ.) 8K x 16 Sequential Access Random Access Memory(SARAM™) Sequential Access from one port ...

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SeekIC No. : 004372035 Detail

IDT70825S/L: Features: High-speed access Military: 35/45ns (max.) Commercial: 20/25/35/45ns (max.) Low-power operation IDT70825SActive: 775mW (typ.)Standby: 5mW (typ.) IDT70825LActive: 775mW (typ.)Standby: 1mW ...

IDT70825S/L Data Sheet

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Part Number:
IDT70825S/L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

High-speed access
Military: 35/45ns (max.)
Commercial: 20/25/35/45ns (max.)
Low-power operation
IDT70825S
Active: 775mW (typ.)
Standby: 5mW (typ.)
IDT70825L
Active: 775mW (typ.)
Standby: 1mW (typ.)
8K x 16 Sequential Access Random Access Memory
(SARAM™)
Sequential Access from one port and standard Random
Access from the other port
Separate upper-byte and lower-byte control of the
Random Access Port
High speed operation
20ns tAA for random access port
20ns tCD for sequential port
25ns clock cycle time
Architecture based on Dual-Port RAM cells
Compatible with Intel BMIC and 82430 PCI Set
Width and Depth Expandable
Sequential side
Address based flags for buffer control
Pointer logic supports up to two internal buffers
Battery backup operation - 2V data retention
TTL-compatible, single 5V (+10%) power supply
Available in 80-pin TQFP and 84-pin PGA
Military product compliant to MIL-PRF-38535 QML
 Industrial temperature range (-40°C to +85°C) is available
for selected speeds
 
The IDT70825 is a high-speed 8K x 16-Bit Sequential Access
Random Access Memory (SARAM). The SARAM offers a single-chip
solution to buffer data sequentially on one port, and be accessed
randomly (asynchronously) through the other port. The device has a


Pinout

Connection Diagram
NOTES:
1. All VCC pins must be connected to power supply.
2. All GND pins must be connected to ground supply.
3. PN-80-1 package body is approximately 14mm x 14mm x 1.4mm.
G84-3 package body is approximately 1.21 in x 1.21 in x .16 in.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.


Specifications

Symbol
Rating
Com'l & Ind'l
Unit
Military
VTERM
Terminal Voltage
with respect to GND
0.5 to +4.5
V
 -0.5 to +7.0
TSTG
Temperature Under
Bias
55 to +125
°C
 -65 to +135
TSTG
Storage
Temperature
-55 to +125
mA
 -65 to +150
IOUT
DC Output Current
50
mA
50

NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VTERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of VTERM > Vcc + 10%.


Description

Dual-Port RAM of the IDT70825S/L based architecture with a standard SRAM interface for the random (asynchronous) access port, and a clocked interface with counter sequencing for the sequential (synchronous) access port. Fabricated using CMOS high-performance technology, this memory device typically operates on less than 775mW of power at maximum high-speed clock-to-data and Random Access.

An automatic power down feature, controlled by CE, permits the on-chip circuitry of each port to enter a very low standby power mode. The IDT70825S/L is packaged in a 80-pin Thin Quad Flatpack (TQFP) or 84-pin Pin Grid Array (PGA). Military grade product is manufactured in compliance with the latest revision of MIL-PRF-38535 QML, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.




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