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IDT70T3539M

Features: ` True Dual-Port memory cells which allow simultaneous access of the same memory location ` High-speed data access Commercial: 3.6ns (166MHz)/4.2ns (133MHz)(max.) Industrial: 4.2ns (133MHz) (max.)` Selectable Pipelined or Flow-Through output mode` Counter enable and repeat features` Du...

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SeekIC No. : 004372084 Detail

IDT70T3539M: Features: ` True Dual-Port memory cells which allow simultaneous access of the same memory location ` High-speed data access Commercial: 3.6ns (166MHz)/4.2ns (133MHz)(max.) Industrial: 4.2ns (133M...

IDT70T3539M Data Sheet

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Part Number:
IDT70T3539M
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` True Dual-Port memory cells which allow simultaneous access of the same memory location
` High-speed data access
  Commercial: 3.6ns (166MHz)/4.2ns (133MHz)(max.)
  Industrial: 4.2ns (133MHz) (max.)
` Selectable Pipelined or Flow-Through output mode
` Counter enable and repeat features
` Dual chip enables allow for depth expansion without additional logic
` Interrupt and Collision Detection Flags
` Full synchronous operation on both ports
  6ns cycle time, 166MHz operation (12Gbps bandwidth)
  Fast 3.6ns clock to data out
  1.5ns setup to clock and 0.5ns hold on all control, data, and address inputs @ 166MHz
  Data input, address, byte enable and control registers
  Self-timed write allows fast cycle time
` Separate byte controls for multiplexed bus and bus matching compatibility
` Dual Cycle Deselect (DCD) for Pipelined Output Mode
` 2.5V (±100mV) power supply for core
` LVTTL compatible, selectable 3.3V (±150mV) or 2.5V (±100mV) power supply for I/Os and control signals on each port
` Includes JTAG functionality
` Industrial temperature range (-40°C to +85°C) is available at 133MHz
` Available in a 256-pin Ball Grid Array (BGA)


Specifications

Symbol Rating
Commercial
& Industrial
Unit
VTERM
(VDD)		 VDD Terminal Voltage
with Respect to GND
-0.5 to +3.6
V
VTERM(2)
(VDDQ)		 VDDQ Terminal Voltage
with Respect to GND
-0.3 to VDDQ + 0.3
V
VTERM(2)
(INPUTS and I/O's)		 Input and I/O Terminal
Voltage with Respect to GND
-0.3 to VDDQ + 0.3
V
TBIAS(3) Temperature Under Bias
55 to +125
TSTG Storage Temperature
65 to +150
TJN Junction Temperature
+150
IOUT(For VDDQ = 3.3V) DC Output Current
50
mA
IOUT(For VDDQ = 2.5V) DC Output Current
40
mA

NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. This is a steady-state DC parameter that applies after the power supply has reached its nominal operating value. Power sequencing is not necessary; however, the voltage on any Input or I/O pin cannot exceed VDDQ during power supply ramp up.
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.



Description

The IDT70T3539M is a high-speed 512K x 36 bit synchronous Dual-Port RAM. The memory array utilizes Dual-Port memory cells to allow simultaneous access of any address from both ports. Registers on control, data, and address inputs provide minimal setup and hold times. The timing latitude provided by this approach allows systems to be designed with very short cycle times. With an input data register, the IDT70T3539M has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode.

The IDT70T3539M can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.




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