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IDT70V261S

Features: ` True Dual-Ported memory cells which allow simultaneous access of the same memory location` High-speed access Commercial: 25/35/55ns (max.) Industrial: 25ns (max.)` Low-power operation IDT70V261S Active: 300mW (typ.) Standby: 3.3mW (typ.) IDT70V261L Active: 300mW (typ.) Standby: 660W (t...

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SeekIC No. : 004372117 Detail

IDT70V261S: Features: ` True Dual-Ported memory cells which allow simultaneous access of the same memory location` High-speed access Commercial: 25/35/55ns (max.) Industrial: 25ns (max.)` Low-power operation ID...

IDT70V261S Data Sheet

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Part Number:
IDT70V261S
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` True Dual-Ported memory cells which allow simultaneous access of the same memory location
` High-speed access
Commercial: 25/35/55ns (max.)
Industrial: 25ns (max.)
` Low-power operation
IDT70V261S Active: 300mW (typ.) Standby: 3.3mW (typ.)
IDT70V261L Active: 300mW (typ.) Standby: 660W (typ.)
` Separate upper-byte and lower-byte control for multiplexed bus compatibility
` IDT70V261 easily expands data bus width to 32 bits or more using the Master/Slave select when cascading more 
  than one device
` M/S = VIH for BUSY output flag on Master M/S = VIL for BUSY input on Slave
` Interrupt Flag
` On-chip port arbitration logic
` Full on-chip hardware support of semaphore signaling between ports
` Fully asynchronous operation from either port
`TTL-compatible, single 3.3V (±0.3V) power supply
` Available in a 100-pin TQFP, Thin Quad Plastic Flatpack
`Industrial temperature range (-40°C to +85°C) is available for selected speed


Pinout

Connection Diagram


Specifications

Symbol
Rating
Commercial
& Industrial
Unit
VTERM(2)
Terminal Voltage
-0.5 to +4.6
V
TBIAS
with Respect to GND Temperature
Under Bias
-55 to +125
oC
TSTG
Storage Temperature
-65 to +150
oC
IOUT
DC Output Current
50
mA
NOTES:
1. Stresses greater than those listed under  ABSOLUTE  MAXIMUM  RATINGS  may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VTERM must not exceed Vcc + 0.3V for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of VTERM > Vcc + 0.3V.


Description

The IDT70V261S is a high-speed 16K x 16 Dual-Port Static RAM. The IDT70V261 is designed to be used as a stand-alone 256K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit-ormore word systems. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 32-bit or wider memory system applications results in fullspeed, error-free operation without the need for additional discrete logic. This device provides two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode.

Fabricated using IDT's CMOS high-performance technology, the IDT70V261S typically operate on only 300mW of power. The IDT70V261 is packaged in a 100-pin Thin Quad Flatpack.




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