Features: *True Dual-Ported memory cells which allow simultaneous reads of the same memory location*High-speed accessCommercial: 25/35/55ns (max.)*Low-power operationIDT70V26S Active: 300mW (typ.) Standby: 3.3mW (typ.)IDT70V26L Active: 300mW (typ.) Standby: 660 µW (typ.)*Separate upper-byte ...
IDT70V26S/L: Features: *True Dual-Ported memory cells which allow simultaneous reads of the same memory location*High-speed accessCommercial: 25/35/55ns (max.)*Low-power operationIDT70V26S Active: 300mW (typ.) S...
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|
Symbol |
Rating |
Commercial |
Unit |
|
VTERM(2) |
Terminal Voltage |
-0.5 to +4.6 |
V |
|
TBIAS |
Temperature Under Bias |
-55 to +125 |
oC |
|
TSTG |
Storage Temperature |
-65 to +150 |
oC |
|
IOUT |
DC Output Current |
50 |
mA |
The IDT70V26S/L is a high-speed 16K x 16 Dual-Port Static RAM.The IDT70V26 is designed to be used as a stand-alone 256K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit-or-more word systems. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 32-bit or widermemory system applications resultsin full-speed, error-free operation without the need for additionaldiscrete logic.
This IDT70V26S/L provides two independent ports with separate control,address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode.
Fabricated using IDT's CMOS high-performance technology, these devices typically operate on only 300mW of power.
The IDT70V26S/L is packaged in a ceramic 84-pin PGA and 84-Pin PLCC.