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IDT70V9349L

Features: `True Dual-Ported memory cells which allow simultaneous access of the same memory location `High-speed clock to data access Commercial: 6.5/7.5/9ns (max.) Industrial: 7.5ns (max.)`Low-power operation IDT70V9359/49LActive: 450mW (typ.) Standby: 1.5mW (typ.)`Flow-Through or Pipelined ou...

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IDT70V9349L: Features: `True Dual-Ported memory cells which allow simultaneous access of the same memory location `High-speed clock to data access Commercial: 6.5/7.5/9ns (max.) Industrial: 7.5ns (max.)`Low-po...

IDT70V9349L Data Sheet

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Part Number:
IDT70V9349L
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`True Dual-Ported memory cells which allow simultaneous access of the same memory location
`High-speed clock to data access
  Commercial: 6.5/7.5/9ns (max.)
  Industrial: 7.5ns (max.)
`Low-power operation
  IDT70V9359/49L
      Active: 450mW (typ.)
      Standby: 1.5mW (typ.)
`Flow-Through or Pipelined output mode on either port via theFT/PIPE pins
`Counter enable and reset features
`Dual chip enables allow for depth expansion without additional logic
`Full synchronous operation on both ports
  3.5ns setup to clock and 0ns hold on all control, data, and address inputs
  Data input, address, and control registers
  Fast 6.5ns clock to data out in the Pipelined output mode
  Self-timed write allows fast cycle time
  10ns cycle time, 100MHz operation in Pipelined output mode
`Separate upper-byte and lower-byte controls for multiplexed bus and bus matching compatibility
`LVTTL- compatible, single 3.3V (±0.3V) power supply
`Industrial temperature range (40°C to +85°C) is available for 83 MHz
`Available in a 100-pin Thin Quad Flatpack (TQFP) an


Pinout

Connection Diagram


Specifications

Symbol Rating

Commercial
& Industrial
Unit
VTERM(2) Terminal Voltage with Respect to GND
-0.5 to +4.6
V
TBIAS Temperature Under Bias
55 to +125
TSTG Storage Temperature
65 to +150
IOUT DC Output Current
50
mA

NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. VTERM must not exceed VDD +0.3V for more than 25% of the cycle time or 10ns maximum, and is limited to 20mA for the period of VTERM VDD + 0.3V.


Description

The IDT70V9349L is a high-speed 8/4K x 18 bit synchronous Dual-Port RAM. The memory array utilizes Dual-Port memory cells to allow simultaneous access of any address from both ports. Registers on control, data, and address inputs provide minimal setup and hold times. The timing latitude provided by this approach allows ystems to be designed with very short cycle times.

With an input data register, the IDT70V9349L has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. Fabricated using IDT's CMOS high-performance technology, these devices typically operate on only 450mW of power.




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