IDT713256SL

The IDT713256SL is a 262,144-bit high-speed static RAM organized as 32K x 8.It is fabricated using IDT's high-performance, high-reliability CMOS technology.The IDT713256SL has outstanding low power characteristics, as well as fast speeds.Address access times of 20, 25, and 30ns are ideal for 16 and 32-bit notebook and laptop cache designs running at 20,25, and 33MHz, and operating from 3.3 volts. For instance,two of these SRAMs interface directly to many 386 notebook cache controllersto form a 64kB cache. Portable communications and test equipment benefit from these fast speeds and low power too.

The IDT713256SL has the following features include:(1)ideal for 16/32-bit notebook/sub-notebook cache at 20, 25 and 33MHz, and for other battery-operated equipment; (2)Fast access times:20/25/30ns; (3)Battery-backup operation: 2V data retention:300uA data retention current (max); (4)Small package for space-efficient layouts:28-pin 300 mil SOJ; (5)ideal configuration for large cache sizes,with minimum space and minimum power:32K x 8; (6)Produced with advanced high-performance CMOS technology; (7)input and output are TTL-compatible; (8)single 3.3V(±0.3V) power supply.When the power management logic puts the IDT713256SL in standby mode, its very low power characteristics contribute to extended battery life.

The absolute maximum ratings of the IDT713256SL are:(1)terminal voltage with respect to GND:-0.5 to +4.6V;(2)terminal voltage with respect to GND:-0.5 to Vcc+0.5V;(3)power disspation:1.0WV;(4)storage temperature range:-55 to +125°C;(5)temperature under bias:-55 to +125°C;(6)DC output current:50mA;(7)operating temperature:0 to +70°C.Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.This SRAM alsooffers battery-backup data retention at as little as 2 volts. Under this condition, power consumption is guaranteed not to exceed 1.0mw and typically will be much smaller.The package chosen for this device, 28-pin 300mi1 SOJ,helps the designer attain the stringent space goals typical of notebooks, sub-notebooks, and battery-operated portable equipment.