PinoutDescriptionThe IDT71T024L150PZI is a 1,048,576-bit very low-power Static RAM organized as 128K x 8. The features of IDT71T024L150PZI are: (1)128K x 8 Organization; (2)Wide Operating Voltage Range: 1.8V to 2.7V; (3)Speed Grades: 150ns, 200ns; (4)Low Operating Power: 11mA (max); (5)Low Standby...
IDT71T024L150PZI: PinoutDescriptionThe IDT71T024L150PZI is a 1,048,576-bit very low-power Static RAM organized as 128K x 8. The features of IDT71T024L150PZI are: (1)128K x 8 Organization; (2)Wide Operating Voltage Ra...
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The IDT71T024L150PZI is a 1,048,576-bit very low-power Static RAM organized as 128K x 8. The features of IDT71T024L150PZI are: (1)128K x 8 Organization; (2)Wide Operating Voltage Range: 1.8V to 2.7V; (3)Speed Grades: 150ns, 200ns; (4)Low Operating Power: 11mA (max); (5)Low Standby Power: 5A (max); (6)Low-Voltage Data Retention: 1.5V (min); (7)Available in 32-pin, 13.4mm x 8mm Type I TSOP pack-age.
The following is about the absolute maximum ratings of IDT71T024L150PZI: (1)VTERM(2) Terminal Voltage with Respect to VSS: 0.5 to +3.6 V ; (2)VTERM(3) Terminal Voltage with Respect to VSS: 0.5 to VDD+0.5V V ; (3)TBIAS Temperature Under Bias: 55 to +125 °C ; (4)TSTG Storage Temperature: 55 to +125 °C ; (5)PT Power Dissipation: 1.0 W ; (6)IOUT DC Output Current: 20 mA.
The electrical characteristics of the IDT71T024L150PZI are: (1)input leakage current: 1A max at VDD=max, VIN=VSS to VDD; (2)output leakage current: 1A max at VDD=max, CS=VIH, VOUT=VSS to VDD; (3)output high voltage: VDD-0.2V min at VDD=1.8 to 2.7V, IOH=-0.3mA or 1.7V min at VDD=2.3 to 2.7V, IOH=-2mA; (4)output low voltage: 0.2V max at VDD=1.8 to 2.7V, IOH=0.3mA or 0.4V max at VDD=2.3 to 2.7V, IOH=2mA.