Features: •Ideal for high-performance processor secondary cache•Commercial (0° to 70°C) and Industrial (-40° to 85°C) temperature options•Fast access times:-Commercial: 10/12/15/20ns-Industrial: 15ns•Low standby current (maximum):-2mA full standby•Small packages for s...
IDT71V256SA: Features: •Ideal for high-performance processor secondary cache•Commercial (0° to 70°C) and Industrial (-40° to 85°C) temperature options•Fast access times:-Commercial: 10/12/15/20...
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Symbol |
Parameter |
Value |
Unit |
VCC |
Supply Voltage |
0.5 to +4.6 |
V |
VTERM(2) |
Terminal Voltage |
55VCC to +0.5 |
V |
TBIAS |
Temperature Under Bias |
55 to +125 |
°C |
TSTG |
Storage Temperature |
55 to +125 |
°C |
PT |
Power Dissipation |
1.0 |
W |
IOUT |
DC Output Current |
50 |
mA |
The IDT71V256SA is a 262,144-bit high-speed static RAM organized as 32K x 8. It is fabricated using IDT's high-performance, high-reliability CMOS technology.
The IDT71V256SA has outstanding low power character- istics while at the same time maintaining very high perfor-mance. Address access times of as fast as10 ns are ideal for 3.3V secondary cache in 3.3V desktop designs.
When power management logic puts the IDT71V256SA in standby mode, its very low power characteristics contribute to extended battery life. By taking CS HIGH, the SRAM willautomatically go to a low power standby mode and will remain in standby as long as CS remains HIGH. Furthermore, under full standby mode (CS at CMOS level, f=0), power consump-tion is guaranteed to always be less than 6.6mW and typically will be much smaller.
The IDT71V256SA is packaged in 28-pin 300 mil SOJ, 28-pin 300 mil plastic DIP, and 28-pin 300 mil TSOP Type Ipackaging.