IDT71V256SA15PZI

IC SRAM 256KBIT 15NS 28TSOP

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SeekIC No. : 003556184 Detail

IDT71V256SA15PZI: IC SRAM 256KBIT 15NS 28TSOP

floor Price/Ceiling Price

Part Number:
IDT71V256SA15PZI
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Series: - Manufacturer: IDT, Integrated Device Technology Inc
Format - Memory: RAM Memory Type: SRAM - Asynchronous
Memory Size: 256K (32K x 8) THD plus Noise : 1.5 %, 0.4 %
Speed: 15ns Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C
Package / Case: 28-TSSOP (0.465", 11.8mm Width) Supplier Device Package: 28-TSOP    

Description

Series: -
Operating Temperature: -40°C ~ 85°C
Packaging: Tube
Memory Size: 256K (32K x 8)
Format - Memory: RAM
Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Memory Type: SRAM - Asynchronous
Package / Case: 28-TSSOP (0.465", 11.8mm Width)
Supplier Device Package: 28-TSOP
Manufacturer: IDT, Integrated Device Technology Inc
Speed: 15ns


Pinout

  Connection Diagram


Description

The IDT71V256SA15PZI is a  262,144-bit high-speed static RAM organized as 32K x 8. The features of IDT71V256SA15PZI are: (1)Ideal for high-performance processor secondary cache; (2)Commercial (0° to 70°C) and Industrial (-40° to 85°C) temperature options; (3)Fast access times; (4)Low standby current (maximum); (5)Small packages for space-efficient layouts; (6)Produced with advanced high-performance CMOS technology; (7)Inputs and outputs are LVTTL-compatible; (8)Single 3.3V(±0.3V) power supply.

The following is about the absolute maximum ratings of IDT71V256SA15PZI: (1)Supply Voltage Relative to GND: 0.5 to +4.6V; (2)Terminal Voltage Relative to GND: 55VCC to +0.5 V; (3)Temperature Under Bias: 55 to +125 °C; (4)Storage Temperature: 55 to +125°C; (5)Power Dissipation: 1.0 W; (6)DC Output Current: 50 mA.

The electrical characteristics of the IDT71V256SA15PZI are: (1)input leakage current: 2A max at VDD=max, VIN=VSS to VDD; (2)output leakage current: 2A max at VDD=max, CS=VIH, VOUT=VSS to VDD; (3)output low voltage: 0.4V max at IOL=8mA, VCC=min; (4)output high voltage: 2.4V min at IOH=-4mA, VCC=min.




Parameters:

Technical/Catalog InformationIDT71V256SA15PZI
VendorIDT, Integrated Device Technology Inc
CategoryIntegrated Circuits (ICs)
Memory TypeSRAM
Memory Size256K (32K x 8)
Speed15ns
InterfaceParallel
Package / Case28-TSOP
PackagingTube
Voltage - Supply3 V ~ 3.6 V
Operating Temperature-40°C ~ 85°C
Format - MemoryRAM
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IDT71V256SA15PZI
IDT71V256SA15PZI



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