IDT72V2111L10PF

The IDT72V2111L10PF is designed as one kind of exceptionally deep, high speed, CMOS first-in-first-out (FIFO) memories with clocked read and write controls.

It has many features. (1)Its organizations is 524,288x9. (2)Pin-compatible with the IDT72V271 and the IDT72V291 supersync FIFOs. (3)10ns read/write cycle time (6.5ns access time). (4)Fixed, low first word data latency time. (5)5V input tolerant. (6)Auto power down minimizes standby power consumption. (7)Master reset clears entire FIFO. (8)Partial reset clears data, but retains programmable settings. (9)Retransmit operation with fixed, low first word data latency time. (10)Empty, full and half-full flags signal FIFO status. (11)Programmable almost-empty and almost-full flags, each flag can default to one of two preselected offsets. (12)Program partial flags by either serial or parallel means. (13)Select IDT standard timing (using EF and FF flags) or first word fall through timing (using OR and IR flags). (14)Output enable puts data outputs into high impedance state. (15)Easily expandable in depth and width. (16)Independent read and write clocks (permit reading and writing simultaneously). (17)High performance submicron CMOS technology. Those are all the main features.

Some absolute maximum ratings of the IDT72V2111L10PF have been concluded into several points as follow. (1)Its terminal voltage with respect to GND would be from -0.5V to 4.5V. (2)Its storage temperature range would be from -55°C to 125°C. (3)Its DC output current would be from -50mA to 50mA. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of the IDT72V2111L10PF are concluded as follow. (1)Its input leakage current would be min -1uA and max 1uA. (2)Its output leakage current would be min -10uA and max 10uA. (3)Its output logic 1 voltage Ioh=-2mA would be min 2.4V. (4)Its output logic 0 voltage would be max 0.4V. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!