IDT72V36110

Features:

· Choose among the following memory organizations:Commercial
IDT72V3640 ¾ 1,024 x 36
IDT72V3650 ¾ 2,048 x 36
IDT72V3660 ¾ 4,096 x 36
IDT72V3670 ¾ 8,192 x 36
IDT72V3680 ¾ 16,384 x 36
IDT72V3690 ¾ 32,768 x 36
IDT72V36100 ¾ 65,536 x 36
IDT72V36110 ¾ 131,072 x 36
· 133 MHz operation (7.5 ns read/write cycle time)
· User selectable input and output port bus-sizing
- x36 in to x36 out
- x36 in to x18 out
- x36 in to x9 out
- x18 in to x36 out
- x9 in to x36 out
· Big-Endian/Little-Endian user selectable byte representation
· 5V input tolerant
· Fixed, low first word latency


Pinout




Specifications

Symbol	Rating	Com'l & Ind'l	Unit
VTERM(2)	Terminal Voltagewith respect to GND	-0.5 to +4.5	V
TSTG	StorageTemperature	55 to +125
IOUT	DC Output Current	50 to +50	mA

Description

The IDT72V36110 are exceptionally deep, high speed, CMOS First-In- First-Out (FIFO) memories with clocked read and write controls and a flexible Bus-Matching x36/x18/x9 data flow. These FIFOs offer several key user benefits:
• Flexible x36/x18/x9 Bus-Matching on both read and write ports
• The period required by the retransmit operation is fixed and short.
• The first word data latency period of the IDT72V36110, from the time the first word is written to an empty FIFO to the time it can be read, is fixed and short.
• High density offerings up to 4 Mbit