Features: • 0.5 MICRON CMOS Technology• ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)• VCC = 3.3V ± 0.3V, Normal Range• VCC = 2.7V to 3.6V, Extended Range• CMOS power levels (0.4 W typ. static)• Rail-to-Rail output...
IDT74LVC257A: Features: • 0.5 MICRON CMOS Technology• ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)• VCC = 3.3V ± 0.3V, Normal Range• VCC = ...
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|
Symbol |
Description |
Max |
Unit |
|
VTERM |
Terminal Voltage with Respect to GND |
0.5 to +6.5 |
V |
|
TSTG |
Storage Temperature |
65 to +150 |
°C |
|
IOUT |
DC Output Current |
50 to +50 |
mA |
|
IIK IOK |
Continuous Clamp Current, VI < 0 or VO < 0 |
50 |
mA |
|
ICC ISS |
Continuous Current through each VCC or GND |
±100 |
mA |
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The IDT74LVC257A is built using advanced dual metal CMOS technology and is designed to multiplex signals from 4-bit data sources to 4-output data lines in busorganized systems. The 3-state outputs do not load the data lines when the output-enable (OE) input is at a high logic level.
The IDT74LVC257A has been designed with a ±24mA output driver. This driver is capable of driving a moderate to heavy load while maintaining speed performance.
To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resisitor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
Inputs of the IDT74LVC257A can be driven from either 3.3V or 5V devices. This feature allows the use of this device as a translator in a mixed 3.3V/5V supply system.