IDT74LVC652A

Features: • 0.5 MICRON CMOS Technology• ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)• VCC = 3.3V ± 0.3V, Normal Range• VCC = 2.7V to 3.6V, Extended Range• CMOS power levels (0.4 W typ. static)• Rail-to-rail output...

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IDT74LVC652A Picture
SeekIC No. : 004373184 Detail

IDT74LVC652A: Features: • 0.5 MICRON CMOS Technology• ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)• VCC = 3.3V ± 0.3V, Normal Range• VCC = ...

floor Price/Ceiling Price

Part Number:
IDT74LVC652A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/2

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Product Details

Description



Features:

• 0.5 MICRON CMOS Technology
• ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)
• VCC = 3.3V ± 0.3V, Normal Range
• VCC = 2.7V to 3.6V, Extended Range
• CMOS power levels (0.4 W typ. static)
• Rail-to-rail output swing for increased noise margin
• All inputs, outputs, and I/O are 5V tolerant
• Supports hot insertion
• Available in SOIC, SSOP, QSOP, and TSSOP packages



Application

• 5V and 3.3V mixed voltage systems
• Data communication and telecommunication systems



Pinout

  Connection Diagram


Specifications

Symbol
Description
Max
Unit
VTERM
Terminal Voltage with Respect to GND
0.5 to +6.5
V
TSTG
Storage Temperature
65 to +150
°C
IOUT
DC Output Current
50 to +50
mA
IIK
IOK
Continuous Clamp Current,
VI < 0 or VO < 0
50
mA
ICC
ISS
Continuous Current through each
VCC or GND
±100
mA

NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.




Description

The LVC652A octal bus transceiver/register is built using advanced dual metal CMOS technology. IDT74LVC652A consists of a bus transceiver circuit, D-type flip-flops, and control circuitry arranged for multiplexed transmission of data directly from the data bus or from the internal storage registers. Output-enable (OEAB and OEBA) inputs are provided to control the transceiver functions. Select-control (SAB and SBA) inputs are provided to select whether real-time or stored data is transferred. The circuitry used for select control eliminates the typical decoding glitch that occurs in a multiplexer during the transition between stored and real-time data. A low input selects real-time data, and a high input selects stored data. Data on the A or B data bus, or both, is stored in the internal D-type flipflops by low-to-high transitions at the appropriate clock (CLKAB or CLKBA)inputs, regardless of the select- or enable-control pins. When the SAB and SBA are in the real-time transfer mode, IDT74LVC652A is possible to store data without using the internal D-type flip-flops by simultaneously enabling OEAB and OEBA. In this configuration, each output reinforces its input. The LVC652A has been designed with a ±24mA output driver. IDT74LVC652A is capable of driving a moderate to heavy load while maintaining speed performance.

Inputs can be driven from either 3.3V or 5V devices. This feature allows the use of IDT74LVC652A as a translator in a mixed 3.3V/5V system environment.




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