IDT7M1001

NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

The IDT7M1001/IDT7M1003 is a 128K x 8/64K x 8 highspeed CMOS Dual-Port Static RAM module constructed on a multilayer ceramic substrate using eight IDT7006 (16K x 8) Dual-Port RAMs and two IDT FCT138 decoders or depopulated using only four IDT7006s and two decoders.

This module of IDT7M1001 provides two independent ports with separate control, address, and I/O pins that permit independent and asynchronous access for reads or writes to any location in memory. System performance is enhanced by facilitating port-to-port communication via semaphore (SEM) "handshake" signaling. The IDT7M1001/1003 module is designed to be used as stand-alone Dual-Port RAM where on-chip hardware port arbitration is not needed. It is the users responsibility to ensure data integrity when simultaneously accessing the same memory location from both ports.

The IDT7M1001/1003 module is packaged on a multilayer co-fired ceramic 64-pin DIP (Dual In-line Package) with dimensions of only 3.2" x 0.62" x 0.38". Maximum access times as fast as 35ns over the commercial temperature range are available.

All inputs and outputs of the IDT7M1001/1003 are TTLcompatible and operate from a single 5V supply. Fully asynchronous circuitry is used, requiring no clocks or refreshing for operation of the module.

All IDT IDT7M1001 military module semiconductor components are manufacured in compliance with the latest revision of MILSTD- 883, Class B, making them ideally suited to applications demanding the highest level of performance and reliability.