IDT7M1014

NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. Inputs and VCC terminals only.
3. I/O terminals only.

The IDT7M1014 is a 4K x 36 asynchronous high-speed BiCMOS Dual-Port static RAM module constructed on a cofired ceramic substrate using 4 IDT7014 (4K x 9) asynchronous Dual-Port RAMs. The IDT7M1014 module is designed to be used as stand-alone 36-bit dual-port RAM.

This module of IDT7M1014 provides two independent ports with separate control, address, and I/O pins that permit independent and asynchronous access for reads or writes to any location in memory.

The IDT7M1014 module is packaged in a 142-lead ceramic PGA (Pin Grid Array). Maximum access times as fast as 15ns
and 25ns are available over the commercial and military temperature ranges respectively.

All IDT IDT7M1014 military modules are constructed with semiconductor components manufactured in compliance with the latest revision of MIL-STD-883, Class B making them ideally suited to applications demanding the highest level of performance and reliability.