Features: * High Speed Switching* Low Saturation Voltage: VCE(sat) = 2.5 V (@ Ic=0.5A)* High Input Impedance*CO-PAK, IGBT with FRD: Trr = 50nS (typ.)Application* General Purpose Inverters* Lamp BallastSpecifications Symbol Characteristics Rating Units VCES Collector-Emitter V...
IGBT CO-PAK: Features: * High Speed Switching* Low Saturation Voltage: VCE(sat) = 2.5 V (@ Ic=0.5A)* High Input Impedance*CO-PAK, IGBT with FRD: Trr = 50nS (typ.)Application* General Purpose Inverters* Lamp Ball...
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|
Symbol |
Characteristics |
Rating |
Units |
|
VCES |
Collector-Emitter Voltage |
600 |
V |
|
VGES |
Gate-Emitter Voltage |
±15 |
V |
|
IC |
Collector Current @ Tc = 25°C |
1.0 |
A |
| Collector Current @ Tc = 100°C |
0.5 |
A | |
|
ICM (1) |
Pulsed Collector Current |
4.0 |
A |
|
IF |
Diode Continuous Forward Current @ Tc = 100°C |
0.5 |
A |
|
IFM |
Diode Maximum Forward Current |
4.0 |
A |
|
PD |
Maximum Power Dissipation @Tc = 25°C |
20 |
W |
| Maximum Power Dissipation @Tc = 100°C |
10 |
W | |
|
Tj |
Operating Junction Temperature |
-55 ~ 150 |
°C |
|
Tstg |
Storage Temperature Range |
-55 ~ 150 |
°C |
|
TL |
Maximum Lead Temp. For Soldering Purposes, 1/8" from case for 5 seconds |
300 |
°C |
Notes:(1) Repetitive rating : Pulse width limited by max. junction temperature