IGBT Transistors HIGH SPEED 2 TECH 1200V 1A
IGP01N120H2: IGBT Transistors HIGH SPEED 2 TECH 1200V 1A
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| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V | ||
| Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | TO-220AB-3 | Packaging : | Tube |

| Parameter | Symbol | Value | Unit |
| Collector-emitter voltage | VCE | 1200 | V |
| Triangular collector peak current (VGS = 15V) TC = 100°C, f = 32kHz |
ICpk | 3.2 1.3 |
A |
| Pulsed collector current, tp limited by Tjmax | ICpuls | 3.5 | |
| Turn off safe operating area VCE 1200V, Tj 150°C |
- | 3.5 | |
| Gate-emitter voltage | VGE | ±20 | |
| Power dissipation TC = 25°C |
Ptot | 28 | W |
| Operating and storage temperature | Tj , Tstg | -40...+150 | °C |
| Soldering temperature 1.6mm(0.063 in.) from case for 10s |
- | 260 225 (for SMD) |
°C |