IGW50N60H3, US $ 2.33-3.5 , Infineon Technologies, IGW50N60H3 DataSheet download, circuit diagram from SeekIC.com

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IGW50N60H3: IGBT Transistors 600V 50A 333W

IGW50N60H3 Data Sheet

US $ 2.33~3.5 / Piece | Get Latest Price

Part Number:: IGW50N60H3
Mfg:: Infineon Technologies
Supply Ability:: 5000

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100~250
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$3.5
$2.87
$2.59
$2.33

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IGW50N60T evaluate
US $2.28 - 3.43 / Piece

IGBT Transistors LOW LOSS IGBT TECH 600V 50A

Product Details

Quick Details

Collector- Emitter Voltage VCEO Max :	600 V	Collector-Emitter Saturation Voltage :	1.85 V
Maximum Gate Emitter Voltage :	20 V	Continuous Collector Current at 25 C :	50 A
Gate-Emitter Leakage Current :	100 nA	Power Dissipation :	333 W
Maximum Operating Temperature :	+ 150 C	Package / Case :	TO-247
Packaging :	Tube

Description

Configuration :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : 20 V
Gate-Emitter Leakage Current : 100 nA
Maximum Operating Temperature : + 150 C
Package / Case : TO-247
Packaging : Tube
Continuous Collector Current at 25 C : 50 A
Power Dissipation : 333 W
Collector-Emitter Saturation Voltage : 1.85 V

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IGW50N60H3

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