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MFG:INFINEON  D/C:09+  

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Part Number: IHW15N120R2

 

MFG: INFINEON

 

D/C: 09+

 

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IHW15N120R2 Maximum Ratings

Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
DC collector current
TC = 25°C
TC = 100°C
IC 30
15
A
Pulsed collector current, tp limited by Tjmax ICpuls 45  
Turn off safe operating area (VCE 1200V, Tj 175°C)   45  
Diode forward current
TC = 25°C
TC = 100°C
IF 30
15
 
Diode pulsed current, tp limited by Tjmax IFpuls 45  
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp 2.5µs, sine halfwave
TC = 100°C, tp 2.5µs, sine halfwave
IFSM 50
130
120
 
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
VGE ±20
±25
V
Power dissipation TC = 25°C Ptot 357 W
Operating junction temperature Tj -40...+175 °C
Storage temperature Tstg -55...+175 °C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s   260 °C
Mounting Torque Ms 0.6 Nm

IHW15N120R2 Features

• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models

IHW15N120R2 Typical Application

• Inductive Cooking
• Soft Switching Applications

IHW15N120R2 datasheet

IHW15N120R2
PDF/DataSheet Download

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