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MFG:Infineon  D/C:07+  

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Part Number: IHW20N120R2

 

MFG: Infineon

 

D/C: 07+

 

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IHW20N120R2 Maximum Ratings

Parameter
Symbol
Value
Unit
Collector-emitter voltage VCE 1200 V
DC collector current
TC = 25°C
TC = 100°C
IC 40
20
A
Pulsed collector current, tp limited by Tjmax ICpuls 60
Turn off safe operating area (VCE 1200V, Tj 175°C) - 60
Diode forward current
TC = 25°C
TC = 100°C
IF 40
20
Diode pulsed current, tp limited by Tjmax IFpuls 30
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp 2.5s, sine halfwave
TC = 100°C, tp 2.5s, sine halfwave
IFSM 50
130
120
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
VGE ±20
±25
V
Power dissipation TC = 25°C Ptot 330 W
Operating junction temperature Tj -40...+175 °C
Storage temperature Tstg -55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

IHW20N120R2 Features

• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• TrenchStop and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

IHW20N120R2 Typical Application

• Inductive Cooking
• Soft Switching Applications

IHW20N120R2 datasheet

IHW15N120R2
PDF/DataSheet Download

Find IHW20N120R2 Suppliers

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