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MFG:INFINEON  Package Cooled:TO-247  D/C:06+  

IHW30N120R2 Product Image

IHW Series Datasheet download

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Part Number: IHW30N120R2

 

MFG: INFINEON

Package Cooled: TO-247

D/C: 06+

 

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IHW30N120R2 Maximum Ratings

Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
DC collector current, limited by
TC = 25
TC = 100
IC 60
30
A
Pulsed collector current, tp limited by Tjmax ICpuls 90
Turn off safe operating area (VCE 1200V, Tj 175) - 90
Diode forward current
TC = 25
TC = 100
IF 60
30
Diode pulsed current, tp limited by Tjmax IFpuls 90
Diode surge non repetitive current, tp limited by Tjmax
TC = 25, tp = 10ms, sine halfwave
TC = 25, tp 2.5µs, sine halfwave
TC = 100, tp 2.5µs, sine halfwave
IFSM 50
130
120
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
VGE ±20
±25
V
Power dissipation, TC = 25 Ptot 390 W
Operating junction temperature Tj -40...+175
Operating junction temperature Tstg -55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

IHW30N120R2 Features

• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

IHW30N120R2 Typical Application

• Inductive Cooking
• Soft Switching Applications

IHW30N120R2 datasheet

IHW15N120R2
PDF/DataSheet Download

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