IHW30N120R2

Gate-Emitter Leakage Current :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2 V
Continuous Collector Current at 25 C : 30 A
Package / Case : TO-247-3
Collector- Emitter Voltage VCEO Max : 1.2 KV
Power Dissipation : 390 W


Features:

• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/


Application

• Inductive Cooking
• Soft Switching Applications


Specifications

Parameter	Symbol	Value	Unit
Collector-emitter voltage	VCE	1200	V
DC collector current, limited by TC = 25 TC = 100	IC	60 30	A
Pulsed collector current, tp limited by Tjmax	ICpuls	90
Turn off safe operating area (VCE 1200V, Tj 175)	-	90
Diode forward current TC = 25 TC = 100	IF	60 30
Diode pulsed current, tp limited by Tjmax	IFpuls	90
Diode surge non repetitive current, tp limited by Tjmax TC = 25, tp = 10ms, sine halfwave TC = 25, tp 2.5µs, sine halfwave TC = 100, tp 2.5µs, sine halfwave	IFSM	50 130 120
Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms)	VGE	±20 ±25	V
Power dissipation, TC = 25	Ptot	390	W
Operating junction temperature	Tj	-40...+175
Operating junction temperature	Tstg	-55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s	-	260