IHW30N90R

Gate-Emitter Leakage Current :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Power Dissipation : 454 W
Continuous Collector Current at 25 C : 30 A
Collector-Emitter Saturation Voltage : 1.7 V
Package / Case : TO-247-3
Collector- Emitter Voltage VCEO Max : 900 V


Features:

•  1.5V typical saturation voltage of IGBT
•  Trench and Fieldstop technology for 900 V applications offers :
    - very tight parameter distribution
    - high ruggedness, temperature stable behavior
    - easy parallel switching capability due to positive temperature coefficient in V_CE(sat)
• Low EMI
•  Qualified according to JEDEC¹ for target applications
•  Application specific optimisation of inverse diode
•  Pb-free lead plating; RoHS compliant



Application

•  Microwave Oven
•  Soft Switching Applications for ZCS


Specifications

Parameter	Symbol	Value	Unit
Collector-emitter voltage	VCE	900	V
DC collector current TC=25 TC=100	IC	60 30	A
Pulsed collector current, tp limited by Tjmax	ICpuls	90
Turn off safe operating area VCE 1200V, Tj 150	-	90
Diode forward current TC=25 TC=100	IF	60 30
Diode pulsed current, tp limited by Tjmax	IFpuls	90
Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms)	VGE	±20 ±25	V
Power dissipation, TC = 25	Ptot	454	W
Operating junction temperature	Tj	-40...+175
Storage temperature	Ts tg	-55...+175
Soldering temperature,1.6mm(0.063 in.)from case for 10s	-	260