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IKB01N120H2: IGBT Transistors HIGH SPEED 2 TECH 1200V 1A

IKB01N120H2 Data Sheet

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Part Number:: IKB01N120H2
Mfg:: Infineon Technologies
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2024/4/28

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IKB06N60T evaluate
US $.54 - .73 / Piece

IGBT Transistors LOW LOSS DuoPack 600V 6A
IKB03N120H2 evaluate
US $.68 - .92 / Piece

IGBT Transistors HIGH SPEED 2 TECH 1200V 3A

Product Details

Quick Details

Configuration :	Single	Collector- Emitter Voltage VCEO Max :	1200 V
Maximum Gate Emitter Voltage :	+/- 20 V	Maximum Operating Temperature :	+ 150 C
Package / Case :	TO-263-3	Packaging :	Reel

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-263-3

Features:

• Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
• 2^nd generation HighSpeed-Technology for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for I_C =1A
• Qualified according to JEDEC2 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models

Specifications

Parameter	Symbol	Value	Unit
Collector-emitter voltage	V_CE	1200	V
DC collector current, limited by T_jmaxT_C = 25, f = 140kHz T_C= 100, f = 140kHz	I_C	3.2 1.3	A
Pulsed collector current, tp limited by T_jmax	I_Cpuls	3.5
Turn off safe operating area V_CE 600V, T_j 175	-	3.5
Diode forward current T_C = 25 T_C = 100	I_F	3.2 1.3
Gate-emitter voltage	V_GE	±20	V
Power dissipation, T_C= 25	P_tot	28	W
Operating junction temperature	T_J,T_stg	-40...+175
Soldering temperature (reflow soldering, MSL1)	-	220

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IKB01N120H2

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