IKW20N60T

IGBT Transistors LOW LOSS DuoPack 600V 20A

product image

IKW20N60T Picture
SeekIC No. : 00142863 Detail

IKW20N60T: IGBT Transistors LOW LOSS DuoPack 600V 20A

floor Price/Ceiling Price

US $ 1.79~2.71 / Piece | Get Latest Price
Part Number:
IKW20N60T
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $2.71
  • $2.42
  • $1.98
  • $1.79
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/27

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-247-3


Features:

• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time 5s
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/



Specifications

Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
600
V
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
IC
40
20
A
Pulsed collector current, tp limited by Tjmax
ICpuls
60
A
Turn off safe operating area (VCE 600V, Tj 175°C)
-
60
A
Diode forward current, limited by Tjmax  TC = 25°C
TC = 100°C
IF
40
20
A
Diode pulsed current, tp limited by Tjmax
IFpuls
60
A
Gate-emitter voltage
VGE
±20
V
Short circuit withstand time2) VGE = 15V, VCC 400V, Tj 150°C
tSC
5
s
Power dissipation TC = 25°C
Ptot
166
W
Operating junction temperature
Tj
-40...+175
°C
Storage temperature
Tstg
-55...+175
°C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
260
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Crystals and Oscillators
Discrete Semiconductor Products
Optoelectronics
Connectors, Interconnects
View more