IKW40N60H3, US $ 2.08-3.04 , Infineon Technologies, IKW40N60H3 DataSheet download, circuit diagram from SeekIC.com

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IKW40N60H3: IGBT Transistors 600V 40A 306W

IKW40N60H3 Data Sheet

US $ 2.08~3.04 / Piece | Get Latest Price

Part Number:: IKW40N60H3
Mfg:: Infineon Technologies
Supply Ability:: 5000

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0~118
118~250
250~500
500~1000

Unit Price
$3.04
$2.74
$2.47
$2.08

Processing time
15 Days
15 Days
15 Days
15 Days

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Upload time: 2024/4/26

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Recent History
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Product Details

Quick Details

Collector- Emitter Voltage VCEO Max :	600 V	Collector-Emitter Saturation Voltage :	1.95 V
Maximum Gate Emitter Voltage :	20 V	Continuous Collector Current at 25 C :	40 A
Gate-Emitter Leakage Current :	100 nA	Power Dissipation :	306 W
Maximum Operating Temperature :	+ 150 C	Package / Case :	TO-247
Packaging :	Tube

Description

Configuration :
Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 1.95 V
Maximum Gate Emitter Voltage : 20 V
Continuous Collector Current at 25 C : 40 A
Gate-Emitter Leakage Current : 100 nA
Power Dissipation : 306 W
Maximum Operating Temperature : + 150 C
Package / Case : TO-247
Packaging : Tube

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IKW40N60H3

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