IKW50N60T, US $ 2.44-3.34 , Infineon Technologies, IKW50N60T DataSheet download, circuit diagram from SeekIC.com

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IKW50N60T: IGBT Transistors LOW LOSS DuoPack 600V 50A

IKW50N60T Data Sheet

US $ 2.44~3.34 / Piece | Get Latest Price

Part Number:: IKW50N60T
Mfg:: Infineon Technologies
Supply Ability:: 5000

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0~130
130~250
250~500
500~1000

Unit Price
$3.34
$3.07
$2.8
$2.44

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15 Days
15 Days
15 Days

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Upload time: 2024/4/27

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Recent History
What is this?

IKW50N60H3 evaluate
US $2.35 - 3.34 / Piece

IGBT Transistors HIGH SPEED SWITCHING
IKW50N60TA evaluate
US $2.93 - 4.02 / Piece

IGBT Transistors 600V 50A 100nA

Product Details

Quick Details

Configuration :	Single	Collector- Emitter Voltage VCEO Max :	600 V
Maximum Gate Emitter Voltage :	+/- 20 V	Maximum Operating Temperature :	+ 150 C
Package / Case :	TO-247-3	Packaging :	Tube

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-247-3

Pinout

Connection Diagram

Specifications

Parameter	Symbol	Value	Unit
Collector-emitter voltage	V_CE	600	V
DC collector current, limited by Tjmax T_C = 25°C T_C = 100°C	I_C	801) 50	A
Pulsed collector current, tp limited by Tjmax	I_{Cpu ls}	150
Turn off safe operating area V_CE 1200V, T_j 150°C	-	150
Diode forward current T_C = 25°C T_C= 100°C	I_F	100 50
Diode pulsed current, t_p limited by T_jmax	I_Fpuls	150
Gate-emitter voltage	V_GE	±20	V
Short circuit withstand time1) V_GE = 15V, V_CC 400V, T_j 150°C	t_SC	5	s
Power dissipation T_C=25°C	P_tot	333	W
Operating	T_j	-40...+175	°C
Storage temperature	T_stg	-55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s	-	260

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IKW50N60T

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