IKW75N60T

IGBT Transistors LOW LOSS DuoPack 600V 75A

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SeekIC No. : 00143324 Detail

IKW75N60T: IGBT Transistors LOW LOSS DuoPack 600V 75A

floor Price/Ceiling Price

US $ 3.05~4.18 / Piece | Get Latest Price
Part Number:
IKW75N60T
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~130
  • 130~250
  • 250~500
  • 500~1000
  • Unit Price
  • $4.18
  • $3.85
  • $3.5
  • $3.05
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 1.9 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 80 A Gate-Emitter Leakage Current : 100 nA
Power Dissipation : 428 W Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Gate-Emitter Leakage Current : 100 nA
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Continuous Collector Current at 25 C : 80 A
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 1.9 V
Package / Case : TO-247-3
Power Dissipation : 428 W


Features:

• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5s
• Positive temperature coefficient in VCE(sat)
• very tight parameter distribution
• high ruggedness, temperature stable behaviour
• very high switching speed
• Low EMI
• Very soft, fast recovery anti-parallel EmCon HE diode
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/



Application

• Frequency Converters
• Uninterrupted Power Supply



Specifications

Parameter Symbol Value Unit
Collector-emitter voltage VCE 600 V
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
IC 802)
75
A
Pulsed collector current, tp limited by Tjmax ICpul s 225
Turn off safe operating area (VCE 600V, Tj 175°C) - 225
Diode forward current, limited by Tjmax
TC = 25°C
TC = 100°C
IF 802)
75
Diode pulsed current, tp limited by Tjmax IFpul s 225
Gate-emitter voltage VGE ±20 V
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150°C
tSC 5 s
Power dissipation TC = 25°C Pt o t 428 W
Operating junction temperature Tj -40...+175
Storage temperature Ts tg -55...+175
Solder temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
  260
1) J-STD-020 and JESD-022
2) Value limited by bondwire
3) Allowed number of short circuits: <1000; time between short circuits: >1s.



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