IL33153

Features: • High Current Output Stage: 1.0 A Source/2.0 A Sink• Protection Circuits for Both Conventional and Sense IGBTs• Programmable Fault Blanking Time• Protection against Overcurrent and Short Circuit• Undervoltage Lockout Optimized for IGBT's• Negative Gat...

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IL33153 Picture
SeekIC No. : 004373984 Detail

IL33153: Features: • High Current Output Stage: 1.0 A Source/2.0 A Sink• Protection Circuits for Both Conventional and Sense IGBTs• Programmable Fault Blanking Time• Protection agains...

floor Price/Ceiling Price

Part Number:
IL33153
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Description



Features:

• High Current Output Stage: 1.0 A Source/2.0 A Sink
• Protection Circuits for Both Conventional and Sense IGBTs
• Programmable Fault Blanking Time
• Protection against Overcurrent and Short Circuit
• Undervoltage Lockout Optimized for IGBT's
• Negative Gate Drive Capability
• Cost Effectively Drives Power MOSFETs and Bipolar Transistors



Pinout

  Connection Diagram


Specifications

Rating Symbol Value Unit
Power Supply Voltage
VCC to VEE
Kelvin Ground to VEE (Note 1 )
VCC-VEE
KGnd - VEE
VEE-O,3 to VCC V
Logic Input Vin VEE-O,3 to VCC V
Current Sense Input VS -0.3 to Vcc V
Blanking/Desaturation Input VBD -0.3 to Vcc V
Gate Drive Output
Source Current
Sink Current
Diode Clamp Current
IO 1.0
2.0
1.0
A
Fault Output
Source Current
Sink Curent
IFO 0.56
180
1.0
100
mA
Power Dissipation and Thermal Characteristics
D Suffix SO-8 Package, Case 751
Maximum Power Dissipation @ TA = 5O°C Thermal
Resistance, Junction-to-Air
P Suffix DIP-8 Package, Case 626
Maximum Power Dissipation @ TA = 5O°C Thermal
Resistance, Junction-to-Air
PD
RJA
PD
RJA
0.56
180
1.0
100
mW
°C/W
mW
0C/W
Operating Junction Temperature TJ +150 °C
Operating Ambient Temperature TA -40 to +105 °C
Storage Temperature Tstg -65 to +150 °C



Description

The IL33153 is specifically designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Although designed for driving discrete and module IGBTs, this device offers a cost effective solution for driving power MOSFETs and Bipolar Transistors. Device protection features include the choice of desaturation or overcurrent sensing and undervoltage detection. These devices of the IL33153 are available in dualinline and surface mount packages and include the following features:




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