IL352T

• Good CTR Linearity Depending on Forward Current
• Isolation Test Voltage, 2500 V_RMS
• High Collector-Emitter Voltage, V_CEO = 30 V
• Low Saturation Voltage
• Fast Switching Times
• Field-Effect Stable by TRIOS*
• Available in Tape and Reel (suffix T)

Emitter
Reverse Voltage ................................................... 6 V
DC Forward Current  ....................................... 60 mA
Total Power Dissipation  ................................. 50 mW
Derate Linearly from 25°C ................... 0.66 mW/°C
Detector
Collector-Emitter Voltage  .................................. 70 V
Emitter-Base Voltage  .......................................... 7 V
Collector Current  ............................................ 50 mA
Collector Current (t 1 ms) .......................... 100 mA
Total Power Dissipation ............................... 150 mW
Derate Linearly from 25°C .................... 2.5 mW/°C
Package
Isolation Test Voltage (between emitter
and detector referred to climate
DIN 40046, part 2, Nov. 74) ..................... 2500 V_RMS
Isolation Resistance
V_IO=500 V, T_A=25°C...................................1012 Ω
V_IO=500 V, T_A=100°C.................................1011 Ω
Storage Temperature Range .... 40°C to +150°C
Ambient Temperature Range .... 40°C to + 85°C
Junction Temperature.....................................100°C
Soldering Temperature
(max 10 s, Dip Soldering Distance
to Seating Plane 1.5 mm) ......................260°C

The IL352T is an optically coupled isolator that features a high current transfer ratio, low coupling capacitance and high isolation voltage. It has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector. The component is housed in a thin line package.

The coupling device of the IL352T is designed for signal transmission between two electrically separated circuits. The potential difference between the circuits to be coupled must not exceed the maximum permissible reference voltages.