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Part Number: ILD03N60

 

MFG: INFINEON

 

D/C: 05+

 

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ILD03N60 Maximum Ratings

Parameter
Symbol
Value
Unit
ILA03N60
Others
Collector-emitter voltage
VCE
600
V
DC collector current TC = 25
TC = 100
IC
3
2.2
4.5
3
A
Pulsed collector current, tp limited by Tjmax, tp < 10 ms
ICpuls
9
Pulsed collector current, tp limited by Tjmax
5.5
Diode forward current TC = 25
TC = 100
IF
4
2.2
4
2.5
Diode pulsed current, tp limited by Tjmax, tp < 10 ms
IFpuls
9
Diode pulsed current, tp limited by Tjmax
5.5
Avalanche energy, single pulse
IC=0.4A, VCE=50V
EAS
0.32
mJ
Gate-emitter voltage
VGE
±30
V
Reverse diode dv/dt
IC 3A, VCE 450V, Tjmax 150
dv/dt
11
V/ns
Power dissipation (TC = 25)
Ptot
16.5
27
W
Operating junction and storage temperature
Tstg
-55...+150
Soldering temperature
for 10 s (according to JEDEC J-STA-020A)
Ts
D-Pak 255
Others 220

ILD03N60 Features

• New high voltage technology designed for ZVS-switching in lamp ballasts
• IGBT with integrated reverse diode
• 4A current rating for reverse diode
• Up to 10 times lower gate capacitance than MOSFET
• Avalanche rated
• 150°C operating temperature
• FullPak isolates 2.5 kV AC (1 min.)

ILD03N60 datasheet

ILD03N60
PDF/DataSheet Download

  • Datasheet: ILD03N60
  • File Size: 338720 KB
  • Manufacturer: INFINEON [Infineon Technologies AG]
  • Click here to Download

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