MFG:SIEMENS Package Cooled:DIP/SOP8 D/C:N/A
MFG: SIEMENS
Package Cooled: DIP/SOP8
D/C: N/A
Description: The ILD615/ ILQ615 are multi-channel phototransistor optocouplers that use GaAs IRLED emitters and hig...
The ILD615/ ILQ615 are multi-channel phototransistor optocouplers that use GaAs IRLED emitters and high gain NPN phototransistors. These devices are constructed using over/under leadframe optical coupling and double molded insulation technology resulting a withstand test voltage of 7500 VACPEAK and a working voltage of 1700 VRMS.
The binned min./max. and linear CTR characteristics make these devices well suited for DC or AC voltage detection. Eliminating the phototransistor base connection provides added electrical noise immunity from the transients found in many industrial control environments.
Because of guaranteed maximum non-saturated and saturated switching characteristics, the ILD615/ ILQ615 can be used in medium speed data I/O and control systems. The binned min./max. CTR specification allow easy worst case interface calculations for both level detection and switching applications. Interfacing with a CMOS logic is enhanced by the guaranteed CTR at IF = 1.0 mA.
| Parameter | Test condition | Symbol | Value | Unit |
| Reverse voltage | VR | 6.0 | V | |
| Forward current | IF | 60 | mA | |
| Surge current | IFSM | 1.5 | A | |
| Power dissipation | Pdiss | 100 | mW | |
| Derate linearly from 25 °C | 1.33 | mW/°C |
ILD615
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