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MFG:SIEMENS Package Cooled:DIP


Part Number: ILQ621
MFG: SIEMENS
Package Cooled: DIP
Description: The ILD621/ ILQ621 and ILD621GB/ ILQ621GB are multi-channel phototransistor optocouplers that use GaAs...
MFG:SIEMENS Package Cooled:DIP


MFG: SIEMENS
Package Cooled: DIP
Description: The ILD621/ ILQ621 and ILD621GB/ ILQ621GB are multi-channel phototransistor optocouplers that use GaAs...
The ILD621/ ILQ621 and ILD621GB/ ILQ621GB are multi-channel phototransistor optocouplers that use GaAs IRLED emitters and high gain NPN silicon phototransistors. These devices are constructed using double molded insulation technology. This assembly process offers a withstand test voltage of 7500 VDC. The ILD621/ ILQ621GB is well suited for CMOS interfacing given the CTR CE sat of 30 % minimum at I F of 1.0 mA. High gain linear operation is guaranteed by a minimum CTR CE of 100 % at 5.0 mA. The ILD/Q621 has a guaranteed CTR CE 50 % minimum at 5.0 mA. The TRansparent IOn Shield insures stable DC gain in applications such as power supply feedback circuits, where constant DC VIO voltages are present.
| Parameter | Test condition | Symbol | Value | Unit |
| Reverse voltage | VR | 6.0 | V | |
| Forward current | IF | 60 mA | mA | |
| Surge current | IFSM | 1.5 | A | |
| Power dissipation | Pdiss | 100 | mW | |
| Derate from 25 °C | 1.33 | mW/°C |
ILQ621
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