ILQ621GB

Maximum Collector Emitter Saturation Voltage : 0.4 V
Minimum Operating Temperature : - 55 C
Packaging : Tube
Maximum Power Dissipation : 500 mW
Maximum Operating Temperature : + 100 C
Input Type : DC
Maximum Forward Diode Voltage : 1.3 V
Current Transfer Ratio : 600 %
Isolation Voltage : 5300 Vrms
Maximum Collector Emitter Voltage : 70 V
Maximum Collector Current : 100 mA
Package / Case : PDIP-16


Features:

• Alternate source to TLP621-2/-4 and TLP621GB-2/-4
• High collector emitter voltage, BV_CEO = 70 V
• Dual and quad packages feature:
- Lower pin and parts count
- Better channel to channel CTR match
- Improved common mode rejection
• Isolation test voltage, 5300 VRMS
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Application

• UL1577, file no. E52744 system code H or J, double protection
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending available with option 1
• BSI IEC 60950; IEC 60065
• FIMKO


Pinout




Specifications

PARAMETER	TEST CONDITION	PART	SYMBOL	VALUE	UNIT
INPUT
Reverse voltage			VR	6.0	V
Forward current			IF	60	mA
Surge current			IFSM	1.5	A
Power dissipation			Pdiss	100	mW
Derate from 25				1.33	mW/
OUTPUT
Collector emitter reverse voltage			VECO	70	V
Collector current			IC	50	mA
	t < 1.0 ms		IC	100	mA
Power dissipation			Pdiss	150	mW
Derate from 25				-2.0	mW/
COUPLER
Isolation test voltage	t = 1.0 s		VISO	5300	VRMS
Package dissipation		ILD621		400	mW
		ILD621GB		400	mW
Derate from 25				5.33	mW/
Package dissipation		ILQ621		500	mW
		ILQ621GB		500	mW
Derate from 25				6.67	mW/
Creepage distance				7.0	mm
Clearance distance				7.0	mm
Isolation resistance	VIO = 500 V, Tamb = 25		RIO	1012
	VIO = 500 V, Tamb = 100		RIO	1011
Storage temperature			Tstg	- 55 to + 150
Operating temperature			Tamb	- 55 to + 100
Junction temperature			Tj	100
Soldering temperature (2)	2.0 mm from case bottom		Tsld	2600

Notes
(1) T_amb = 25 , unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP).


Description

The ILD621/ILQ621 and ILD621GB/ILQ621GB are multi-channel phototransistor optocouplers that use GaAs IRLED emitters and high gain NPN silicon phototransistors. These devices are constructed using double molded insulation technology. This assembly process offers a withstand test voltage of 7500 VDC.

The ILD621/ILQ621GB is well suited for CMOS interfacing given the CTRCEsat of 30 % minimum at IF of 1.0 mA. High gain linear operation is guaranteed by a minimum CTRCE of 100 % at 5.0 mA. The ILD/Q621 has a guaranteed CTRCE 50 % minimum at 5.0 mA. The transparent ion shield insures stable DC gain in applications such as power supply feedback circuits, where constant DC VIO voltages are present.