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MFG:SIEMENS Package Cooled:DIP
Part Number: ILQ621GB
MFG: SIEMENS
Package Cooled: DIP
Description: The ILD621/ILQ621 and ILD621GB/ILQ621GB are multi-chann...
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ILQ621GB
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DataSheet
General Description
ILQ621GB General Description
The ILD621/ILQ621 and ILD621GB/ILQ621GB are multi-channel phototransistor optocouplers that use GaAs IRLED emitters and high gain NPN silicon phototransistors. These devices are constructed using double molded insulation technology. This assembly process offers a withstand test voltage of 7500 VDC.
The ILD621/ILQ621GB is well suited for CMOS interfacing given the CTRCEsat of 30 % minimum at IF of 1.0 mA. High gain linear operation is guaranteed by a minimum CTRCE of 100 % at 5.0 mA. The ILD/Q621 has a guaranteed CTRCE 50 % minimum at 5.0 mA. The transparent ion shield insures stable DC gain in applications such as power supply feedback circuits, where constant DC VIO voltages are present.
ILQ621GB Maximum Ratings
| PARAMETER | TEST CONDITION | PART | SYMBOL | VALUE | UNIT |
| INPUT | |||||
| Reverse voltage | VR | 6.0 | V | ||
| Forward current | IF | 60 | mA | ||
| Surge current | IFSM | 1.5 | A | ||
| Power dissipation | Pdiss | 100 | mW | ||
| Derate from 25 | 1.33 | mW/ | |||
| OUTPUT | |||||
| Collector emitter reverse voltage | VECO | 70 | V | ||
| Collector current | IC | 50 | mA | ||
| t < 1.0 ms | IC | 100 | mA | ||
| Power dissipation | Pdiss | 150 | mW | ||
| Derate from 25 | -2.0 | mW/ | |||
| COUPLER | |||||
| Isolation test voltage | t = 1.0 s | VISO | 5300 | VRMS | |
| Package dissipation | ILD621 | 400 | mW | ||
| ILD621GB | 400 | mW | |||
| Derate from 25 | 5.33 | mW/ | |||
| Package dissipation | ILQ621 | 500 | mW | ||
| ILQ621GB | 500 | mW | |||
| Derate from 25 | 6.67 | mW/ | |||
| Creepage distance | 7.0 | mm | |||
| Clearance distance | 7.0 | mm | |||
| Isolation resistance | VIO = 500 V, Tamb = 25 | RIO | 1012 | ||
| VIO = 500 V, Tamb = 100 | RIO | 1011 | |||
| Storage temperature | Tstg | - 55 to + 150 | |||
| Operating temperature | Tamb | - 55 to + 100 | |||
| Junction temperature | Tj | 100 | |||
| Soldering temperature (2) | 2.0 mm from case bottom | Tsld | 2600 | ||
(1) Tamb = 25 , unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP).
ILQ621GB Features
• Alternate source to TLP621-2/-4 and TLP621GB-2/-4
• High collector emitter voltage, BVCEO = 70 V
• Dual and quad packages feature:
- Lower pin and parts count
- Better channel to channel CTR match
- Improved common mode rejection
• Isolation test voltage, 5300 VRMS
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
ILQ621GB Typical Application
• UL1577, file no. E52744 system code H or J, double protection
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending available with option 1
• BSI IEC 60950; IEC 60065
• FIMKO
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending available with option 1
• BSI IEC 60950; IEC 60065
• FIMKO
ILQ621GB Connection Diagram
ILQ621GB
PDF/DataSheet Download
- Datasheet: ILQ621GB
- File Size: 246285 KB
- Manufacturer: SIEMENS [Siemens Semiconductor Group]
- Click here to Download
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