IM29LV001T

The IM29LV001T/B is a 1 Mega-bit, 5V-only page erasable flash memory organized as 128K X 8 bits. IM29LV001T is manufactured with IMT's proprietary double metal, 0.40 m CMOS flash technology. High performance cell design of IM29LV001T and advanced process technology attain better reliability, manufacturability, circuit performance and future scaleability than other alternative approaches. Fast, self-timed program/erase operations are made possible with an innovative cell and array architecture which is free from the over-erase problem of the traditional stacked-gate structures.

Single page (512 bytes) data alterability ensures optimum flexibility and efficiency in program codes, parameters and data storage. IM29LV001T also allows backward compatibility to other large-erase-block based flash products for direct replacement.

The IM29LV001T/B is designed with interface features for direct in-system programming and erase operations. Vendor re-programmable, hardwired data protection is provided for absolute prevention in inadvertent data alteration and virus infection.

The IM29LV001 conforms to the JEDEC byte wide memory pin-out and single supply flash command standards.

Designed, manufactured and tested for extended endurance applications, the IM29LV001 is specified for more than 104 cycling endurance and greater than 10 years of data retention.