Purchase IMBD4448, In-stock IMBD4448 From SeekIC.
MFG:General Package Cooled:Sot-23 D/C:09+
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IMBD4448
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Suppliers
DataSheet
General Description
IMBD4448 Maximum Ratings
| Symbol | Value | Unit | |
| Reverse Voltage | VR | 75 | V |
| Peak Reverse Voltage | VRM | 100 | V |
| Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 °C andf 50 Hz |
I0 | 1501) | mA |
| Surge Forward Current at t < 1 s and Tj = 25 °C | IFSM | 500 | mA |
| Power Dissipation at Tamb = 25 °C | Ptot |
3501) |
mW |
| Junction Temperature | Tj | 150 | °C |
| Storage Temperature Range | TS | 65 to +150 | °C |
| 1) Device on fiberglass substrate, see layout | |||
IMBD4448 Features
·Silicon Epitaxial Planar Diodes
·Fast switching diode in case SOT-23, especially suited for automatic insertion.
·This diode is also available in other case styles including: the DO-35 case with the type designation 1N4448, the Mini-MELF case with the type designation LL4448, and the SOD-123 case with the type designation 1N4448W
·Fast switching diode in case SOT-23, especially suited for automatic insertion.
·This diode is also available in other case styles including: the DO-35 case with the type designation 1N4448, the Mini-MELF case with the type designation LL4448, and the SOD-123 case with the type designation 1N4448W
IMBD4448
PDF/DataSheet Download
- Datasheet: IMBD4448
- File Size: 154870 KB
- Manufacturer: GE [General Semiconductor]
- Click here to Download
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