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INA-02186

Features: • Cascadable 50 Gain Block• Low Noise Figure: 2.0 dB Typical at 0.5 GHz• High Gain: 31 dB Typical at 0.5 GHz 26 dB Typical at 1.5 GHz• 3 dB Bandwidth: DC to 0.8 GHz• Unconditionally Stable (k>1)• Low Cost Plastic PackageSpecifications Parame...

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INA-02186: Features: • Cascadable 50 Gain Block• Low Noise Figure: 2.0 dB Typical at 0.5 GHz• High Gain: 31 dB Typical at 0.5 GHz 26 dB Typical at 1.5 GHz• 3 dB Bandwidth: DC to 0.8 GH...

INA-02186 Data Sheet

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Part Number:
INA-02186
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Cascadable 50 Gain Block
• Low Noise Figure: 2.0 dB Typical at 0.5 GHz
• High Gain:
   31 dB Typical at 0.5 GHz
   26 dB Typical at 1.5 GHz
• 3 dB Bandwidth: DC to 0.8 GHz
• Unconditionally Stable (k>1)
• Low Cost Plastic Package



Specifications

Parameter
Absolute Maximum[1]
Device Current
50 mA
Power Dissipation[2,3,4]
400 mW
RF Input Power
+13 dBm
Junction Temperature
+150
Storage Temperature
PD
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25.
3. Derate at 11.1 mW/ for TC > 144 for INA-02184.
4. Derate at 10 mW/ for TC > 110C for INA-02186.


Description

The INA-02184 and INA-02186 are low-noise silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) feedback amplifiers housed in low cost plastic packages. They are designed for narrow or wide bandwidth commercial applications that require high gain and low noise IF or RF amplification.

The INA series of MMICs is fabricated using HP's 10 GHz fT, 25 GHz fMAX, ISOSAT™-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection of the INA-02186 to achieve excellent performance, uniformity and reliability.




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