Features: • Cascadable 50 Gain Block• Low Noise Figure: 2.5 dB Typical at 1.5 GHz• High Gain: 26.0 dB Typical at 1.5 GHz• 3 dB Bandwidth: DC to 2.8 GHz• Unconditionally Stable (k>1)• Low Power Dissipation• Hermetic Gold-Ceramic Surface Mount PackageSpe...
INA-03170: Features: • Cascadable 50 Gain Block• Low Noise Figure: 2.5 dB Typical at 1.5 GHz• High Gain: 26.0 dB Typical at 1.5 GHz• 3 dB Bandwidth: DC to 2.8 GHz• Unconditionall...
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Parameter | Absolute Maximum[1] |
Device Current | 25 mA |
Power Dissipation[2,3] | 200mW |
RF Input Power | +13 dBm |
Junction Temperature | 200°C |
Storage Temperature | 65 to 200°C |
Thermal Resistance[2,4]: jc = 150°C/W |
The INA-03170 is a low-noise silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) feedback amplifier housed in a hermetic, high reliability package. It is designed for narrow or wide bandwidth commercial, industrial and military applications that require high gain and low noise IF or RF amplification with minimum power consumption.
The INA series of MMICs of the INA-03170 is fabricated using HP's 10 GHz fT, 25ÊGHz f MAX, ISOSAT™-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.