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INA-12063

Features: • Integrated, Active Bias Circuit• Single Positive Supply Voltage (1.5 5V)• Current Adjustable, 1 to 10mA• 2 dB Noise Figure at 900ÊMHz• 16 dB Gain at 900 MHz 25 dB Gain at 100 MHzApplication• Amplifier Applications for Cellular, Cordless, Speci...

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INA-12063: Features: • Integrated, Active Bias Circuit• Single Positive Supply Voltage (1.5 5V)• Current Adjustable, 1 to 10mA• 2 dB Noise Figure at 900ÊMHz• 16 dB Gain at ...

INA-12063 Data Sheet

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Part Number:
INA-12063
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• Integrated, Active Bias Circuit
• Single Positive Supply Voltage (1.5 5V)
• Current Adjustable, 1 to 10mA
• 2 dB Noise Figure at 900ÊMHz
• 16 dB Gain at 900 MHz 25 dB Gain at 100 MHz


Application

• Amplifier Applications for
  Cellular, Cordless, Special
  Mobile Radio, PCS, ISM,
  and Wireless LAN
  Applications


Specifications

Symbol Parameter Units Absolute
Maximum[1]
Vd Supply Voltage, to Ground V 7
Vc Collector Voltage V 7
Ic Collector Current mA 15
Pin CW RF Input Power dBm 13
Tj Junction Temperature °C 150
TSTG Storage Temperature °C -65 to 150
Thermal Resistance[2]:
j-c = 170°C/W
Notes:
  1. Operation of this device above any one of these limits may cause permanent damage.
  2. TC = 25°C (TC is defined to be the temperature at the package pins where contact is made to the circuit board).


Description

Hewlett-Packard's INA-12063 is a Silicon monolithic self-biased transistor amplifier that offers excellent gain and noise figure for applications to 1.5 GHz. Packaged in an ultra-miniature SOT-363 package, it requires half the board space of a SOT-143 package.

The INA-12063 is a unique RFIC that combines the performance flexibility of a discrete transistor with the simplicity of using an integrated circuit. Using a patented bias circuit, the performance and operating current of the INA-12063 can be adjusted over the 1 to 10ÊmA range.

The INA-12063 is fabricated using HP's 30 GHz fMAX ISOSAT™ Silicon bipolar process which uses nitride self-alignment submicrometer lithography, trench isolation, ion implantation, gold metalization, and polyimide intermetal dielectric and scratch protection to achieve superior performance, uniformity, and reliability.




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