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INA-34063

Features: • +8 dBm P1 dB at 1.9 GHz• 21 dB Gain at 1.9 GHz• High Isolation 32 dB at 1.9 GHz• Single +3V Supply• Unconditionally StableApplication• LO Buffer and DriverAmplifier for Cellular,Cordless, Special MobileRadio, PCS, ISM, WirelessLAN, DBS, TVRO, and TVT...

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SeekIC No. : 004375450 Detail

INA-34063: Features: • +8 dBm P1 dB at 1.9 GHz• 21 dB Gain at 1.9 GHz• High Isolation 32 dB at 1.9 GHz• Single +3V Supply• Unconditionally StableApplication• LO Buffer and D...

INA-34063 Data Sheet

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Part Number:
INA-34063
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• +8 dBm P1 dB at 1.9 GHz
• 21 dB Gain at 1.9 GHz
• High Isolation 32 dB at 1.9 GHz
• Single +3V Supply
• Unconditionally Stable


Application

• LO Buffer and Driver Amplifier for Cellular, Cordless, Special Mobile Radio, PCS, ISM, Wireless LAN, DBS, TVRO, and TV Tuner


Pinout

Connection Diagram


Specifications

Symbol Parameter Units Absolute
Maximum[1]
Vd Device Voltage,
RF output to ground		 V 6.0
Pin CW RF Input Power dBm +7.0
Tj Junction Temperature °C 150
TSTG Storage Temperature °C -65 to 150



Description

Agilent's INA-34063 is a Silicon RFIC amplifier that offers excellent gain and output power for applications to 3.0 GHz. Packaged in an ultraminiature SOT-363 package, it requires half of the board space of a SOT-143 package.

With its wide bandwidth and high linearity, the INA-34063 is suitable as a driver amplifier for various applications. The INA-34063 also features high reverse isolation, making it an excellent candidate for LO buffer applications.

The INA-34063 is fabricated using Agilent's 30 GHzfmax, ISOSAT™ Silicon-bipolar process that uses nitride, self alignment,submicrometer lithography,trench isolation, ion implantation, and polyimide intermetal dielectric and scratch protection to achieve superior performance, uniformity and reliability.




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