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INF85116

Features: • Low power CMOS-maximum active current 1.0 mA-maximum standby current 10 A (at 5.5 V), typical 4 A• Non-volatile storage of 16-Kbits organized as eight blocks of 256x8-bits during 20 years ( at 55oC )• Single supply (Ucc=2,7 ÷ 5,5 V);• Automatically increased wor...

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SeekIC No. : 004375465 Detail

INF85116: Features: • Low power CMOS-maximum active current 1.0 mA-maximum standby current 10 A (at 5.5 V), typical 4 A• Non-volatile storage of 16-Kbits organized as eight blocks of 256x8-bits du...

INF85116 Data Sheet

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Part Number:
INF85116
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low power CMOS
-maximum active current 1.0 mA
-maximum standby current 10 A (at 5.5 V), typical 4 A
• Non-volatile storage of 16-Kbits organized as eight blocks of 256x8-bits during 20 years ( at 55oC )
• Single supply (Ucc=2,7 ÷ 5,5 V);
• Automatically increased word's address
• On-chip voltage multiplier
• Serial input/output I2C-bus
• 1000000 ERASE/WRITE cycles per byte
• Internal timer for writing (no external components)
• Write operations: multi byte write mode to 32 bytes
• Write - protection input
• Power-on-reset Temperature range: -40oC ÷ +85oC


Description

The INF85116N is an 16-Kbits (2048 x 8-bit) floating gate Electrically Erasable Programmable Read Only Memory (EEPROM). Power consumption is low due to the full CMOS technology used. The programming voltage is generated on-chip, using a voltage multiplier.

As data bytes are received and transmitted via the serial I2C-bus, a package using eight pins is sufficient.

Only one INF85116N device is required to support all eight blocks of 256 x 8-bit each.




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