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Part Number: INF85116

 

 

 

 

Description: The INF85116N is an 16-Kbits (2048 x 8-bit) floating gate Electrically Erasable Programmable Read Only...


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INF85116 General Description


The INF85116N is an 16-Kbits (2048 x 8-bit) floating gate Electrically Erasable Programmable Read Only Memory (EEPROM). Power consumption is low due to the full CMOS technology used. The programming voltage is generated on-chip, using a voltage multiplier.

As data bytes are received and transmitted via the serial I2C-bus, a package using eight pins is sufficient.

Only one INF85116N device is required to support all eight blocks of 256 x 8-bit each.

INF85116 Features

• Low power CMOS
-maximum active current 1.0 mA
-maximum standby current 10 A (at 5.5 V), typical 4 A
• Non-volatile storage of 16-Kbits organized as eight blocks of 256x8-bits during 20 years ( at 55oC )
• Single supply (Ucc=2,7 ÷ 5,5 V);
• Automatically increased word's address
• On-chip voltage multiplier
• Serial input/output I2C-bus
• 1000000 ERASE/WRITE cycles per byte
• Internal timer for writing (no external components)
• Write operations: multi byte write mode to 32 bytes
• Write - protection input
• Power-on-reset Temperature range: -40oC ÷ +85oC

INF85116 datasheet

INF8594E
PDF/DataSheet Download

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