MOSFET COOL MOS
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 900 V |
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 6.9 A |
| Resistance Drain-Source RDS (on) : | 800 mOhms | Configuration : | Single |
| Maximum Operating Temperature : | + 150 C | Package / Case : | TO-220FP |
| Packaging : | Tube |
| Technical/Catalog Information | IPA90R800C3 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25° C | 6.9A |
| Rds On (Max) @ Id, Vgs | 800 mOhm @ 4.1A, 10V |
| Input Capacitance (Ciss) @ Vds | 1100pF @ 100V |
| Power - Max | 33W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 42nC @ 10V |
| Package / Case | TO-220FP |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPA90R800C3 IPA90R800C3 |