IPB03N03LA

MOSFET N-CH 25V 80A D2PAK

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IPB03N03LA: MOSFET N-CH 25V 80A D2PAK

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Part Number:
IPB03N03LA
Mfg:
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Series: OptiMOS™ Manufacturer: Infineon Technologies
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V Continuous Drain Current : 15 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 80A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 55A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 100µA Gate Charge (Qg) @ Vgs: 57nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 7027pF @ 15V
Power - Max: 150W Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 25V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power - Max: 150W
Current - Continuous Drain (Id) @ 25° C: 80A
Manufacturer: Infineon Technologies
Series: OptiMOS™
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2V @ 100µA
Gate Charge (Qg) @ Vgs: 57nC @ 5V
Input Capacitance (Ciss) @ Vds: 7027pF @ 15V
Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 55A, 10V


Features:

• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel - Logic level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated



Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current ID TC=25 2) 80 A
TC=100 80
Pulsed drain current ID,pulse TC=25 3) 385
Avalanche energy, single pulse EAS ID=80 A, RGS=25 Ω 960 mJ
Reverse diode dv /dt dv /dt ID=80 A, VDS=20 V, di /dt =200 A/µs,
T j,max=175
6 kV/µs
Gate source voltage4) VGS   ±20 V
Power dissipation Ptot TC=25 °C 150 W
Operating and storage temperature Tj, Tstg   -55 ...175
IEC climatic category; DIN IEC 68-1     55/175/56  



Parameters:

Technical/Catalog InformationIPB03N03LA
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs2.7 mOhm @ 55A, 10V
Input Capacitance (Ciss) @ Vds 7027pF @ 15V
Power - Max150W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs57nC @ 5V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IPB03N03LA
IPB03N03LA



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