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Part Number: IPB050N06N

 

 

 

 

 

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IPB050N06N Maximum Ratings

Parameter Symbol Rating Unit
Continuous Drain Current, Tc = 25 ID 100 A
Continuous Drain Current,Tc = 100 ID 100 A
Pulsed drain current TC=25 2) ID,pulse 400 A
Avalanche energy, single pulse
I D=80 A, RGS=25 		EAS 810 mJ
Reverse diode dv /dt
I D=80 A, VDS=48 V,
di /dt =200 A/s,
T j,max=175 		dv/dt 6 KV/ns
Gate source voltage T C=25 VGS ±20 V
Power dissipation Ptot 300 W
Operating Junction and Storage Temperature Range TJ,TSTG -55 to + 175
IEC climatic category; DIN IEC 68-1   55/175/56  
1) Current is limited by bondwire; with an RthJC=0.7 K/W the chip is able to carry 114 A.
2) See figure 3

IPB050N06N Features

• For fast switching converters and sync. rectification
• N-channel enhancement - normal level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant

IPB050N06N datasheet

IPB03N03LA
PDF/DataSheet Download

  • Datasheet: IPB03N03LA
  • File Size: 325335 KB
  • Manufacturer: INFINEON [Infineon Technologies AG]
  • Click here to Download

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