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IPB05N03LG

Features: • Ideal for high-frequency dc/dc converters• Qualified according to JEDEC1) for target application• N-channel - Logic level• Excellent gate charge x R DS(on) product (FOM)• Very low on-resistance R DS(on)• Superior thermal resistance• 175operatin...

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IPB05N03LG: Features: • Ideal for high-frequency dc/dc converters• Qualified according to JEDEC1) for target application• N-channel - Logic level• Excellent gate charge x R DS(on) produc...

IPB05N03LG Data Sheet

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Part Number:
IPB05N03LG
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target application
• N-channel - Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• 175operating temperature
• dv /dt rated
• Pb-free lead plating; RoHS compliant


Specifications

Parameter
Symbol
Conditions

Value
Unit
Continuous drain current
ID
TC=252)
80
A
TC=100
76
Pulsed drain current
ID,pulse
TC=253)
385
Avalanche energy, single pulse
EAS
ID=72 A, RGS=25 Ω
190
mJ
Reverse diode dv /dt
dv/dt
ID=80 A, VDS=20 V,
di /dt =200 A/µs,
Tj,max=175
6
kV/µs
Gate source voltage4)
VGS
±20
V
Power dissipation
Ptot
TC=25
94
W
Operating and storage temperature
Tj, Tstg
-55 ... 175
IEC climatic category; DIN IEC 68-1
55/175/56
1) J-STD20 and JESD22


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