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IPB06CN10NG

Features: • N-channel, normal level• Excellent gate charge x RDS(on) product (FOM)• Very low on-resistance RDS(on)• 175 °C operating temperature• Pb-free lead plating; RoHS compliant• Qualified according to JEDEC1) for target application• Ideal for high-fr...

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IPB06CN10NG: Features: • N-channel, normal level• Excellent gate charge x RDS(on) product (FOM)• Very low on-resistance RDS(on)• 175 °C operating temperature• Pb-free lead plating; ...

IPB06CN10NG Data Sheet

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Part Number:
IPB06CN10NG
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification


Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current I D T C=25 2) 100 A
T C=100 88
Pulsed drain current3) I D,pulse T C=25 3) 400
Avalanche energy, single pulse E AS I D=100 A, R GS=25 480 mJ
Reverse diode dv /dt dv /dt I D=100 A, V DS=80 V,
di /dt =100 A/s,
T j,max=175 		6 kV/s
Gate source voltage4) V GS ±20 V
Power dissipation P tot T C=25 214 W
Operating and storage temperature T j, T stg -55 ... 175
IEC climatic category; DIN IEC 68-1 55/175/56

1)J-STD20 and JESD22
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air.
4) Tjmax=150 °C and duty cycle D=0.01 for Vgs<-5V
2) Current is limited by bondwire; with an RthJC=0.7 K/W the chip is able to carry 124 A.
3) See figure 3




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